| 摘要 |
The present invention provides a producing method with which large silicon carbide (SiC) single crystal can be produced at low cost. Silicon carbide single crystal is produced or grown by dissolving and reacting silicon (Si) and carbon (C) in an alkali metal flux. The alkali metal preferably is lithium (Li). With this method, silicon carbide single crystal can be produced even under low-temperature conditions of 1500°C or lower, for example. The photograph of FIG. 3B is an example of a silicon carbide single crystal obtained by the method of the present invention. |
