| 摘要 |
An on die thermal sensor in a semiconductor memory device is provided to maintain temperature sensitivity by preventing the decrease of voltage variation rate of a temperature information voltage for temperature variation even though a power supply voltage decreases. According to an on die thermal sensor in a semiconductor memory device, a band gap reference circuit(22) outputs a band gap voltage with a level varying in correspondence to temperature variation and a reference voltage with a constant level regardless of temperature variation using the band gap voltage. A voltage amplification unit(26b) outputs a temperature information voltage by amplifying the band gap voltage. A temperature information code generation unit generates a temperature information code corresponding to the potential level of the temperature information voltage. The voltage amplification unit comprises a reference voltage transfer part(262), a feedback part(R9,R10) and a band gap voltage amplification part(264b). The feedback part divides the temperature information voltage by referring to the transferred reference voltage and feeds the divided temperature information voltage back. The band gap voltage amplification part amplifies the band gap voltage on the ground of the fed-back voltage.
|
