METHOD FOR FORMING METAL WIRE IN SEMICONDUCTOR DEVICE

摘要

A method for forming a metal line in a semiconductor device is provided to prevent copper ions of a copper line from being diffused in an aluminum line by forming plural titanium-silicide layers as a diffusion barrier layer. A trench is formed on an interlayer dielectric(10) formed on a semiconductor device, and then a copper material is deposited in the trench to form a copper line(30). A diffusion barrier layer composed of a nitride titanium layer(40) and titanium-silicide layers(51,61) is formed on the interlayer dielectric and the metal line. A metal pad is formed on the diffusion barrier layer. The metal pad is made of aluminum.