| 摘要 |
A method for cleaning a semiconductor device is provided to prevent pH shock from occurring on a wafer and effectively removing copper byproduct produced after a chemical mechanical polishing process. A CMP process is performed on a wafer(110) having copper and then copper byproduct remaining on a surface of the wafer is cleaned by using an amine-based basic cleaning solution. The residue of the amine-based basic cleaning solution on the surface of the wafer is cleaned with deionized water. Then, the wafer is cleaned by using an acid cleaning solution of citric acid series. The acid cleaning solution on the surface of the wafer is cleaned by using deionized water, and then the deionized water is dried.
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