PROCEDE DE FABRICATION D'UNE STRUCTURE DEMONTABLE EN FORME DE PLAQUE, EN PARTICULIER EN SILICIUM, ET APPLICATION DE CE PROCEDE.

摘要

Production of a silicon plate shaped dismountable structure (1) comprises forming an intermediate layer (4) on a substrate (3), applying a basic heat treatment to a substructure (2), assembling a superstrate (5) on thermally treated intermediate layer to obtain the structure in the form of plate, applying a complementary heat treatment to the structure, and generating a consolidation of the connection between superstrate and the intermediate layer and/or the complementary structural transformation of the intermediate layer. The production of a silicon plate shaped dismountable structure (1) comprises forming an intermediate layer (4) on a substrate (3), applying a basic heat treatment to a substructure (2), assembling a superstrate (5) on thermally treated intermediate layer to obtain the structure in the form of plate, applying a complementary heat treatment to the structure, and generating a consolidation of the connection between superstrate and the intermediate layer and/or the complementary structural transformation of the intermediate layer, attaching the superstrate to the intermediate layer by molecular adhesion, reducing a thickness of the substrate and/or superstrate, preparing components/integrated circuits on the superstrate and/or substrate, and preparing grooves and/or engravings through the superstrate and/or substrate. The dismountable structure comprises substrate, superstrate, and intermediate layer laid between the substrate and the superstrate. The intermediate layer comprises a basic material in which extrinsic molecules/atoms are distributed, which is different from the molecules/atoms of the base material, in order to constitute the substructure. The presence of the extrinsic molecules/atoms in the selected base material generates a structural transformation of the intermediate layer. The heat treatment generates a mechanical, chemical and/or thermal embrittlement of the intermediate layer. The heat treatment of the intermediate layer generates a formation of microbubbles or microcavities. The intermediate layer is made of doped silica. The concentration of phosphorus and boron is 6-14% and 0-4% respectively. The heat treatment is carried out at 900-1200[deg]C. The substrate and/or superstrate comprise a thermal silicon oxide on the side of the intermediate layer. The microbubbles/microcavities are with open cells and constitute of canals. An independent claim is included for a separation process of the substrate and superstrate.