发明名称 |
CRYSTALLIZATION METHOD OF AMORPHOUS SILICON THIN FILM |
摘要 |
A method for crystallizing an amorphous silicon thin film is provided to coat the silicon thin film with metal particles by immersing a substrate with the amorphous silicon thin film into a metal solution. A metal solution containing a catalytic metal is prepared, and then a substrate(101) deposited with an amorphous silicon thin film(103) is coated with the metal solution. Heat treatment is performed on the coated substrate to crystallize the amorphous silicon thin film. The metal solution further contains a solvent material for melting the catalytic material, and an adhesive material for bonding the catalytic material to the substrate. The metal solution comprises (NiCl2)4H2, (Na8C6H5O7)2H2O, NH4Cl, (NaH2PO2)2H2O, ammonia water and deionized water.
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申请公布号 |
KR100806846(B1) |
申请公布日期 |
2008.02.22 |
申请号 |
KR20070005608 |
申请日期 |
2007.01.18 |
申请人 |
SUNGKYUNKWAN UNIVERSITY FOUNDATION FOR CORPORATE COLLABORATION |
发明人 |
YI, JUN SIN;HWANG, SUNG HYUN;JUNG, SUNG WOOK;PARK, HYUNG JUN;LEE, JEOUNG IN |
分类号 |
H01L21/324 |
主分类号 |
H01L21/324 |
代理机构 |
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地址 |
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