METHOD FOR MANUFACTURING P-TYPE GROUP III NITRIDE SEMICONDUCTOR, AND GROUP III NIRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE,申请号KR20067006741-传众专利搜索

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发明名称	METHOD FOR MANUFACTURING P-TYPE GROUP III NITRIDE SEMICONDUCTOR, AND GROUP III NIRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE
摘要
申请公布号	KR100806262(B1)	申请公布日期	2008.02.22
申请号	KR20067006741	申请日期	2006.04.07
申请人		发明人
分类号	C01G15/00;H01L33/00;H01L21/20;H01L21/205;H01L33/06;H01L33/32;H01L33/42;H01S5/323	主分类号	C01G15/00
代理机构		代理人
主权项
地址

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