| 摘要 |
A photoresist developer comprising a basic aqueous solution containing a nonionic surfactant and an ammonium compound, wherein specified nonionic surfactants are contained in an amount of 0.5 to 10 mass% and specified ammonium compounds in an amount of 0.01 to 5.0 mass%. Thus, there can be provided a photoresist developer that even in the development of thick-film resist, is free from scumming and can realize excellent pattern formation.
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