| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a DRAM capacitor which easily ensures the adhesiveness of a lower electrode and a peripheral insulating film, prevents an increase in leakage current of a capacitor in this portion, prevents the collapse of the lower electrode in wet-etching, and improves the reliability of the device, and to provide the method of manufacturing the semiconductor device. <P>SOLUTION: The semiconductor device comprises a cylinder opening 96 formed by making insulating films (a silicon oxide film 23 and a silicon nitride film 32) apertured; a capacitor 54 constituted by a lower electrode 51 (a titanium nitride film) formed in such a manner that the bottom surface and the side surface of the cylinder opening 96 are covered, and an upper electrode 53 formed on the surface of the lower electrode 51 via a capacitance insulating film 52; adhesion layers 81 and 81a (titanium oxide films) provided at the interface between the lower electrode 51 and the cylinder opening 96; and an interlayer 82 (an acid silicon nitride film) formed by modifying the interfaces of the insulating films 23 and 32 with the adhesion layers 81 and 81a. <P>COPYRIGHT: (C)2008,JPO&INPIT |
