| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma film deposition system where sputtering can be efficiently performed so as to form a film with a desired film thickness on a substrate by controlling the distance between plasma and a target and/or the substrate, with a simple constitution. <P>SOLUTION: The plasma film deposition system is provided with: a plasma film deposition apparatus 101 comprising a cathode 15, an anode 46, a sheet plasma deformation mechanism 110 for deforming plasma flowing between the cathode 15 and the anode 46 into a sheet shape, a target 37 and a substrate 33; a first electrode detector 102 detecting the voltage between the target 37 and the anode 46; a first driving mechanism 104 moving the target 37 to a vertical direction to a direction in which the plasma flows; and a controller 106. The controller 106 regulates the position of the target 37 by driving the first driving mechanism 104 based on the voltage value detected by the first voltage detector 102. <P>COPYRIGHT: (C)2008,JPO&INPIT |
