发明名称 THERMAL-TYPE INFRARED SOLID-STATE IMAGING DEVICE AND INFRARED CAMERA
摘要 PROBLEM TO BE SOLVED: To provide a high-definition thermal-type infrared imaging device having a hollow structure which realizes superior heat insulating properties, and can be manufactured at low cost and with high yield. SOLUTION: The thermal-type infrared solid-state imaging device 10 is equipped with a substrate 11 which has transistors, an insulating film 12 coating the substrate 11, a dead space 13 bored in the insulating film 12, and a heat detector 16 demarcated in a membrane section 14 above the dead space 13 in the insulating film 12 for infrared detection, along with the transistors. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008039570(A) 申请公布日期 2008.02.21
申请号 JP20060213542 申请日期 2006.08.04
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YOSHIDA SHINJI;INOUE KENICHI;TOJO TOMOAKI
分类号 G01J1/02;H01L27/14;H01L27/144;H04N5/33;H04N5/335;H04N5/369 主分类号 G01J1/02
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