RADICAL-ASSISTED BATCH FILM DEPOSITION

摘要

PROBLEM TO BE SOLVED: To provide a process for simultaneously performing radical-assisted film deposition on a plurality of wafer substrates. SOLUTION: The plurality of wafer substrates are loaded into a reactor that is heated to a desired film deposition temperature. A stable species source of an oxide or nitride counter ion is introduced into the reactor. An in situ radical-generating reactant is also introduced into the reactor together with a cationic ion deposition source. The cationic ion deposition source is introduced for a time sufficient for depositing a cationic ion-oxide or a cationic-ion nitride film simultaneously on the plurality of wafer substrates. The deposition temperature is below a conventional chemical vapor deposition temperature adopted in the absence of the in situ radical-generating reactant. COPYRIGHT: (C)2008,JPO&INPIT