发明名称 SUBSTRATE TREATMENT APPARATUS AND CLEANING METHOD
摘要 A substrate treating apparatus and related cleaning method are disclosed. The apparatus includes a stage heater disposed in the reaction chamber, serving as a first electrode during the generation of in-situ plasma, and supporting a substrate, a shower head disposed in the reaction chamber opposing the stage heater, serving as a second electrode during the generation of the in-situ plasma, and supplying a reaction gas into the reaction chamber, a remote plasma generator disposed external to the reaction chamber and configured to supply a cleaning gas to the reaction chamber following activation of the cleaning gas, and a gas transmitter disposed between the reaction chamber and the remote plasma generator and configured to transmit the reaction gas and the cleaning gas to the shower head.
申请公布号 US2008041308(A1) 申请公布日期 2008.02.21
申请号 US20070830156 申请日期 2007.07.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HONG HYUNG-SIK;KIM KI-SUN;HUH NO-HYUN;LEE JONG-MYEONG
分类号 C23C16/00;B08B5/00 主分类号 C23C16/00
代理机构 代理人
主权项
地址