发明名称 |
Technique for low-temperature ion implantation |
摘要 |
A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.
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申请公布号 |
US2008044938(A1) |
申请公布日期 |
2008.02.21 |
申请号 |
US20060504367 |
申请日期 |
2006.08.15 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
ENGLAND JONATHAN;WALTHER STEVEN R.;MUKA RICHARD S.;BLAKE JULIAN;MURPHY PAUL J.;LIEBERT REUEL B. |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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