| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a power conversion device having a plurality of semiconductor elements laminated thereon, while preventing enlarging of the device, by preventing the entirety of the device from becoming thick. <P>SOLUTION: The semiconductor device comprises a first semiconductor element 11 and a second semiconductor element 12, with the principal plane electrodes having the same electric potential, a first heat radiator 15 with the first semiconductor element 11 laminated via a first power substrate 13, a second heat radiator 16 with the second semiconductor element 12 laminated via a second power substrate 14 bonded to the first power substrate 13, in a state with the principal planes disposed facing each other, and a first upper surface electrode 19 bonded to the principal plane electrode of the second semiconductor element 12, with a high thermally-conductive material 20 laminated in between the first semiconductor element 11 and the second semiconductor element 12 that is disposed facing the first semiconductor element 11. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
