SEMICONDUCTOR DEVICE FABRICATION METHOD

摘要

PROBLEM TO BE SOLVED: To fabricate a semiconductor device with good device characteristics without increasing a manufacturing cost. SOLUTION: An oxide film 11 is formed on a first principal surface of a silicon substrate 1 and then a part of the film is selectively opened. An n+epitaxial film, a p epitaxial film, and a p+epitaxial film are formed through epitaxial lateral growth. Next, the n+epitaxial film, p epitaxial film and p+epitaxial film are polished to form a cathode film 20 composed of an n+buffer area 12, a p channel area 13 and a p+area 14. Furthermore, a gate oxide film 16, a gate electrode 17, an inter-layer insulating film 18 and a metal cathode electrode 19 are sequentially formed on the cathode film 20. COPYRIGHT: (C)2008,JPO&INPIT