| 摘要 |
PROBLEM TO BE SOLVED: To provide a reaction tube which can eliminate a cause forming an emission source of impurities to be captured in an epitaxial film of a nitride semiconductor, and to provide a vapor growing device using the same. SOLUTION: The reaction tube adopts a structure where a periphery of a susceptor arranging a substrate at least therein is formed with sapphire. Also, the vapor growing device uses the reaction tube. COPYRIGHT: (C)2008,JPO&INPIT
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