| 摘要 |
PROBLEM TO BE SOLVED: To provide an impurity activating method which increases the activation depth of a plurality of laser pulses each irradiated in suitable conditions onto a substrate including a semiconductor layer with an impurity added to its surface layer. SOLUTION: The impurity activating method comprises (a) a step of irradiating a substrate including a semiconductor layer with an impurity added to its surface layer with a first laser having a first pulsewidth from a first pulse laser source, for irradiating a pulsed laser beam to melt the substrate surface; and (b) a step of irradiating a region overlapped with the incident region of the first laser pulse incident on the substrate surface in step (a) with a second laser pulse, having a longer pulse width than the first pulse width and a peak power equal to or lower than that of the first laser pulse on the substrate surface from a second pulse laser source for irradiating a pulse laser beam. COPYRIGHT: (C)2008,JPO&INPIT
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