| 摘要 |
A method for forming an LDD structure of a gate electrode of a MOSFET. The gate electrode may be formed by sequentially depositing a gate oxide layer and a poly silicon layer over a semiconductor substrate. A photo resist pattern may be formed over the resultant structure. A gate electrode may be formed by an etch using the photo resist pattern as a mask. An LDD area may be formed by ion implanting a low-concentration dopant using the gate electrode as a mask. After depositing a spacer layer over the upper surface of the substrate, a spacer may be formed by etching. A source/drain area may be formed by ion implanting a high-concentration dopant using the gate electrode and the spacer as a mask. A portion of the gate oxide layer where the gate oxide layer and the LLD area overlap may be removed by performing an etch process over the resultant structure.
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