| 摘要 |
The present invention provides a non-volatile semiconductor storage device which includes word lines used as control gates of memory cells; a pre-decoder which generates pre-decode signals; a main decoder which generates main decode signals; and a sub-decoder. The sub-decoder is equipped with pull-up power lines whose potentials are controlled by the main decode signals, a pull-down power line, and drivers which drive word lines according to the pre-decode signals. Each of the drivers includes a PMOS transistor whose source is connected with one of the pull-up power lines, whose drain is connected with one of the word lines, and whose gate is supplied with an appropriate pre-decode signal as well as an NMOS transistor whose drain is connected with the drain of the PMOS transistor, whose gate is supplied with the appropriate pre-decode signal, and whose source is connected with the pull-down power line. The pre-decoder can pull down the pre-decode signals to a negative potential lower than a ground potential.
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