Halbleiterbauteil mit Korrosionsschutzschicht und Verfahren zur Herstellung desselben

摘要

Semiconductor unit comprises: a circuit carrier (2) with interior contact areas (5), exhibiting a first material with a first electro-chemical potential; a semiconductor chip (3) with an active surface (13) and a flipside (11), where the active surface exhibits chip contact areas (14) having a second material with second electro-chemical potential; and bonding wire connections (15) between the chip contact areas and the interior contact areas of the circuit carrier, where the bonding wire connection exhibits a third material with a third electro-chemical potential. Semiconductor unit comprises: a circuit carrier (2) with interior contact areas (5), exhibiting a first material with a first electro-chemical potential; a semiconductor chip (3) with an active surface (13) and a flipside (11), where the active surface exhibits chip contact areas (14) having a second material with second electro-chemical potential; and bonding wire connections (15) between the chip contact areas and the interior contact areas of the circuit carrier, where the bonding wire connection exhibits a third material with a third electro-chemical potential, and the connection place between the chip contact areas and the bonding wire connection and/or the connection place between the interior contact areas and the bonding wire connection are coated with a corrosion protecting layer. An independent claim is included for the preparation of the semiconductor unit.