METHOD FOR DEPOSITION OF MAGNESIUM DOPED (AL, IN, GA, B)N LAYERS
摘要
<p>A method for growing an improved quality device by depositing a low temperature (LT) magnesium (Mg) doped nitride semiconductor thin film. The low temperature Mg doped nitride semiconductor thin film may have a thickness greater than 50nm. A multi quantum well (MQW) active layer may be grown at a growth temperature and the LT Mg doped nitride semiconductor thin film may deposited on the MQW active layer at a substrate temperature no greater than 150 °C above the growth temperature.</p>
申请公布号
WO2008021403(A2)
申请公布日期
2008.02.21
申请号
WO2007US18074
申请日期
2007.08.16
申请人
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;IZA, MICHAEL;SATO, HITOSHI;DENBAARS, STEVEN, P.;NAKAMURA, SHUJI