Solid electrolyte memory cell has optional access and solid electrolyte block with three solid electrolyte contact areas, where electrodes are electrically connected with contact areas, which are spatially separated from each other

摘要

The memory cell has an optional access and a solid electrolyte block (3) with three solid electrolyte contact areas. The electrodes (1,2) are electrically connected with solid electrolyte contact areas. Paths are formed, erasable or detectable, conducting to the solid electrolyte block by applying tensions between the solid electrolyte contact areas. The contact areas are spatially separated from each other, in such a manner that conducting paths proceed from different solid electrolyte contact areas or end within different solid electrolyte contact areas without overlapping one another. A resistive layer is arranged on the surface of the solid electrolyte The resistive layer is made up of metal nitride, where material of the resistive layer is selected from a group materials comprising tantalum nitride, tungsten nitride, or doped silicon. Independent claims are also included for the following: (1) solid electrolyte memory cell array (2) a method for writing of data into a solid electrolyte memory cell (3) a method for reading data from a solid electrolyte memory cell.