| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which removes an effect to an alignment mark of CMP of an interlayer dielectric film surface, and can accurately and securely carry out the detection of alignment mark. <P>SOLUTION: The semiconductor device manufacturing method includes a process of selectively removing a gate multi-layer film 35 in the alignment mark portion 31 positioned on an element isolating dielectric film 3, a process of forming the alignment mark 32 in the alignment mark portion 31 the circumference of which is surrounded by the gate multi-layer film 35, a process of forming a first interlayer dielectric film 15 on a semiconductor substrate 2, a process of selectively removing the first interlayer dielectric film 15 in the alignment mark portion 31, a process of removing or thinning the element isolating dielectric film 3 surrounding the alignment mark 32, and a process of carrying out an alignment of lithography using the alignment mark 32 and forming a pattern on the first interlayer dielectric film 15. <P>COPYRIGHT: (C)2008,JPO&INPIT |
