| 发明名称 |
GAXIN1-XN SUBSTRATE AND METHOD OF CLEANING GAXIN1-XN SUBSTRATE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a Ga<SB>x</SB>In<SB>1-x</SB>N substrate with which a high quality epitaxial film can be stably grown, and to provide a cleaning method for obtaining the same. <P>SOLUTION: The Ga<SB>x</SB>In<SB>1-x</SB>N substrate is characterized in that the number of particles each having a particle diameter of ≥0.2 μm and existing on the surface thereof is ≤20 pieces when the diameter of the substrate is 2 in. Further, in the photoelectron spectrum of the Ga<SB>x</SB>In<SB>1-x</SB>N substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, the peak area ratio of C<SB>1s</SB>electron to N<SB>1s</SB>electron (peak area of C<SB>1s</SB>electron/peak area of N<SB>1s</SB>electron) is ≤3. <P>COPYRIGHT: (C)2008,JPO&INPIT |
| 申请公布号 |
JP2008037705(A) |
申请公布日期 |
2008.02.21 |
| 申请号 |
JP20060214537 |
申请日期 |
2006.08.07 |
| 申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
KAMIMURA TOMOYOSHI;NAKAHATA HIDEAKI |
| 分类号 |
C30B29/38;B08B3/08;B08B3/12;C30B33/10;H01L33/32 |
主分类号 |
C30B29/38 |
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