发明名称 PLATING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To reduce the spending of an additive in the plating with a plating liquid containing the additive. <P>SOLUTION: The plating apparatus 200 is structured by arranging a laminated body 204 of a neutral filtration film 20 and a cation exchange film 208 between a substrate-to-be-treated 100 arranged in a plating bath 201 and an anode 220 so that the neutral filtration film 210 is positioned in the substrate-to-be-treated 100 side and separating the plating bath 201 into a first section 202a containing the substrate-to-be-treated 100 and the additive and a second section 202b containing the anode 220 by the laminated body 204. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008038208(A) 申请公布日期 2008.02.21
申请号 JP20060214895 申请日期 2006.08.07
申请人 NEC ELECTRONICS CORP 发明人 KUROKAWA TETSUYA;ARITA KOJI;NODA KAORI
分类号 C25D17/00;C25D7/12;C25D17/10 主分类号 C25D17/00
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