| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a mask pattern capable of overcoming the limit of resolution even in an already-provided exposure apparatus when exposing a photosensitive film and of making it possible to form a fine pattern below the resolution. SOLUTION: A silicon film 110 is formed on a substrate 100 and the silicon film 110 is patterned using a photosensitive film pattern 120 formed by an exposure apparatus of a photosensitive film. The patterned silicon film 110 is oxidized and an oxide film 130 is formed on the entire surface of the silicon film 110 with a preset thickness and then the oxide film 130 is removed so that the upper surface of the silicon film 110 is exposed. A mask pattern 130b is formed with the oxide film 130 from which the silicon film 110 has been removed left and a fine pattern to be formed actually is formed using the mask pattern. Due to this, the resolution of the already-provided exposure apparatus can be overcome and a fine pattern below the resolution can be formed. COPYRIGHT: (C)2008,JPO&INPIT
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