| 摘要 |
PROBLEM TO BE SOLVED: To provide an electronic device that has excellent characteristics and can prevent the deterioration of the characteristics with the passage of time, and to provide an electronic apparatus equipped with the electronic device. SOLUTION: A thin-film transistor 1 comprises a source electrode 20a and a drain electrode 20b which are separately arranged, an intermediate layer 60 formed on the surfaces of the source electrode 20a and the drain electrode 20b, an organic semiconductor layer 30 provided to cover the source electrode 20a and the drain electrode 20b and to be in contact with the intermediate layer 60, a gate insulation layer 40 formed on the organic semiconductor layer 30, and a gate electrode 50 formed on the gate insulation layer 40. The intermediate layer 60 is composed, as a main material, of a polymer in which a hydrophilic portion and a hydrophobic portion, which exhibits more hydrophobic nature than the hydrophilic portion, are joined. In the intermediate layer 60, the polymer is oriented with the hydrophilic portion being on the side of the source electrode 20a and the drain electrode 20b, and the hydrophobic portion being on the side of the organic semiconductor layer 30. COPYRIGHT: (C)2008,JPO&INPIT
|
