发明名称 |
Nitride semiconductor light emitting diode |
摘要 |
A nitride semiconductor light emitting diode includes: an n-type clad layer; an active layer formed on the n-type clad layer; an electron blocking layer formed on the active layer, the electron blocking layer being composed of a p-type nitride semiconductor including a transition element of group III; and a p-type clad layer formed on the electron blocking layer.
|
申请公布号 |
US2008042161(A1) |
申请公布日期 |
2008.02.21 |
申请号 |
US20070797492 |
申请日期 |
2007.05.03 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
HAN JAE-WOONG;SHIM JI HYE |
分类号 |
H01L33/06;H01L33/10;H01L33/32 |
主分类号 |
H01L33/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|