| 摘要 |
It is an object of the present invention to provide a method for forming a resist pattern, in which ArF excimer laser light can be utilized as the exposure light for the patterning, the resist patterns can be thickened stably to an intended thickness independently of the sizes of the resist patterns, and the fineness of the fine space patterns can surpass the limit in terms of exposure or resolution of exposure devices. The method for forming a resist pattern of the present invention comprises at least forming a resist pattern, coating a resist pattern thickening material to cover the surface of the resist pattern, baking the resist pattern thickening material, and developing and separating the resist pattern thickening material, wherein at least one of the coating, the baking and the developing is carried out plural times.
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