| 摘要 |
<p>A method of forming a gate pattern in a semiconductor device is provided to absolutely remove a portion of a BARC film by forming a gate pattern using the BARC film having a thickness of 450 to 550 Angstrom. A topology of a poly 1(203) which is used as a floating gate is formed on a silicon substrate(201). A poly 2(205) used as a control gate is formed on the entire surface of the poly 1. BARC(Bottom Anti-Reflective Coating) film(207) is deposited on the entire surface of the poly 2. A photoresist is deposited on the entire surface of the BARC film, and then a photoresist pattern region is formed by using a mask. The BARC film is selectively etched by using the photoresist pattern region as a mask to form a photoresist pattern(209b).</p> |
