| 摘要 |
A semiconductor memory device with a selectively enabled I/O sense amplifier is provided to reduce current consumption in an I/O sense amplifier part and a data output buffer part by enabling an I/O(Input/Output) sense amplifier selectively. A semiconductor memory device includes a plurality of memory banks(10,20,30,40), a plurality of global I/O(Input/Output) lines(GIO1,GIO2,GIO3,GIO4), a plurality of I/O(Input/Output) sense amplifier parts(15,25,35,45), and a control part(60). The plurality of global I/O lines is comprised in each memory bank and transmits data read out from each memory bank. The plurality of I/O sense amplifier parts is arranged in each memory bank, and receives the transmitted data. The control part enables the plurality of I/O sense amplifier parts selectively by controlling fetch time of the read-out data.
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