发明名称 PLASMA FILM DEPOSITION APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma film deposition apparatus where the cleaning of an anode can be easily performed with a simple constitution, and further, production efficiency is high. <P>SOLUTION: The plasma film deposition apparatus is equipped with: a vessel 101; a plasma gun 1 for generating plasma; an anode 48 for receiving plasma; a film deposition chamber 4 forming a part of the vessel 101 and having a film deposition space 42 at the inside thereof; a shielding member 52 provided between the anode 48 and the film deposition space 42, shielding and releasing the film deposition space 42 to the anode 48 by advancing to the position confronted with the anode 48 at the internal space of the vessel 101 and retreating therefrom, and also functioning as a discharge electrode; a driving mechanism 53 for driving the shielding member 52 so as to be advanced/retreated; and a power source 36 of applying voltage for generating plasma between the anode 48 and the shielding member 52 by discharging. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008038197(A) 申请公布日期 2008.02.21
申请号 JP20060213459 申请日期 2006.08.04
申请人 SHIN MEIWA IND CO LTD 发明人 OKADA MOTOI;YAMAKAWA KENJI;KOZUKA TAKESHI
分类号 C23C14/00;H05H1/48 主分类号 C23C14/00
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