发明名称 METHOD AND APPARATUS OF FORMING FILM, AND RECORDING MEDIUM
摘要 PROBLEM TO BE SOLVED: To provide a method and an apparatus of forming a film capable of appropriately selecting film formation process conditions of a barrier layer, an auxiliary seed layer or the like to scrape a bottom of a recess, and forming a thin film on a side face or an upper surface while removing a layer to cause a rise in electric resistance on the bottom of a scraped dent, and a recording medium. SOLUTION: The film forming method ionizes a metallic target 78 in a processing vessel 34 to generate metallic particles containing metallic ions, pulls the particles into a material W to be processed mounted on a mount 44 by bias power, and forms a thin film on the surface of the material where a recess 5 is formed on the surface. Further, the method includes a barrier layer formation step of forming the barrier layer 10 made of a thin film containing first metal entirely on the surface of the material to be processed containing the surface in the recess while scraping the bottom of the lowermost layer of the recess to form the scraped dent 12, and an auxiliary seed film formation step of further scraping the bottom of the scraped dent and forming the auxiliary seed film 14A for plating made of a thin film containing second metal on the surface of the material to be processed containing the surface in the recess. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008041700(A) 申请公布日期 2008.02.21
申请号 JP20060209944 申请日期 2006.08.01
申请人 TOKYO ELECTRON LTD 发明人 IKEDA TARO;MIZUSAWA YASUSHI;SAKUMA TAKASHI;YOKOYAMA OSAMU;HATANO TATSUO
分类号 H01L21/768;C23C14/06;H01L21/3205;H01L23/52 主分类号 H01L21/768
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