| 摘要 |
A step-up voltage generator for a semiconductor memory is provided which includes a level detection unit, a bank-active command generator, and an oscillation signal generator. The level detection unit compares a reference voltage with a division voltage of a pumping voltage, detects a level of the pumping voltage according to the comparison result, and generates a level detection signal. The bank-active command generator generates bank-active signals in response to a row-active command signal. The oscillation signal generator determines whether it received the bank-active signals from the bank-active command generator, replies to the bank-active signals or the level detection signal according to the determination result, and generates oscillation signals. An active-voltage UP converter performs pumping of a power-supply voltage in response to the oscillation signals, and generates a step-up voltage.
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