| 摘要 |
A method for manufacturing a semiconductor device includes forming a predetermined structure including a first inorganic insulating film covering a copper interconnection, an organic insulating film formed above the first inorganic insulating film and having a hole pattern, and a second inorganic insulating film formed above the organic insulating film and having a trench pattern, dry etching the first inorganic insulating film by an etching gas containing a fluorocarbon family gas, using the organic insulating film having the hole pattern as a mask, to form a through-hole reaching the copper interconnection, and performing a plasma treatment using a mixed gas of an oxygen gas and a hydrocarbon gas, thereby removing fluorine remaining on a surface of the copper interconnection exposed by the through-hole, and thereby dry etching the organic insulating film using the second inorganic insulating film having the trench pattern as a mask.
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