发明名称 |
HIGH VOLTAGE FIELD EFFECT TRANSISTOR |
摘要 |
A high voltage field effect transistor according to the present invention has: a p-type low concentration drain region and a low concentration source region formed on both sides of a channel formation region within a n-type region of a semiconductor substrate; a high concentration drain region formed in the low concentration drain region, an impurity concentration of which is higher than that of the low concentration drain region; a gate insulating film that at least covers a surface of the channel formation region; a field oxide film formed on the low concentration drain region so as to be in contact with an end section of the gate insulating film; a gate electrode formed on said gate insulating film and at least a part of said field oxide film so as to cover an entire channel formation region and an end section of said low concentration drain region; and a non-oxide region of the low concentration drain region, on both sides of which there are the gate electrode and the high concentration drain region, and on a surface of which there are not formed the high concentration drain region and the field oxide film.
|
申请公布号 |
US2008042197(A1) |
申请公布日期 |
2008.02.21 |
申请号 |
US20070819983 |
申请日期 |
2007.06.29 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
YAMAGISHI MASASHI;HONMA TOSHIHIRO |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|