| 摘要 |
A semiconductor device and a manufacturing method of the same are provided to control a threshold voltage capable of being changed according to a depth of a moat and to reduce a boron permeation effect. An isolation layer(25) is formed on a substrate(21) in order to define an active region(26). An insulating layer(31) is formed in the substrate of an edge part of the active region in order to remove an influence of a moat which is formed at a boundary between the isolation layer and the active region. A transistor is formed on the substrate of the active region. The insulation layer is separated from the boundary of the isolation layer and the active region to the active region, as much as 50-100 angstroms. The insulating layer has a line width of 3-20 angstroms.
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