| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory unit having a structure for improving the yield in the production process of a semiconductor memory unit by forming a contact plug in high yield, and to provide a production method therefor. <P>SOLUTION: The semiconductor memory unit comprises a semiconductor substrate, a MOS transistor formed on the surface of the semiconductor substrate, a cell contact plug of a polycrystalline silicon film disposed between the gates of the MOS transistor so as to be connected each with a source and a drain of the MOS transistor, a pad metal layer provided on the cell contact plug, an interlayer insulating film provided on the pad metal layer, a memory storage provided on the interlayer insulating film, and a contact plug disposed in an opening provided through the interlayer insulating film for connecting the memory storage and the above-mentioned pad metal layer. <P>COPYRIGHT: (C)2008,JPO&INPIT |
