| 摘要 |
<P>PROBLEM TO BE SOLVED: To determine the processing state of substrate processing on the basis of the behavior of a peak-to-peak voltage (Vpp) of the high-frequency power of a proper frequency, even if two or more high-frequency electric power of different frequencies are applied to electrodes disposed in a processing chamber while they are superimposed on each other. <P>SOLUTION: The plasma treatment device 1 is configured so as to be equipped with two or more high-frequency power sources 21 and 31 which supply the high-frequency power of different frequencies, a common feed line 35 which superimposes the high-frequency power supplied from the high-frequency power supplies 21 and 31 and feeds them to the same high-frequency electrode 6, high-frequency power extraction means 41 and 45 which extract the high-frequency power of a prescribed frequency from the high-frequency power supplied from the feed line 35, and high-frequency voltage detectors 42 and 46 which measure a voltage of the high-frequency power of the prescribed frequency extracted by the high-frequency power extraction means 41 and 45. <P>COPYRIGHT: (C)2008,JPO&INPIT |
