SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND DISPLAY DEVICE

摘要

A semiconductor device includes a supporting layer (101) which is composed of polymeric molecules and has a thickness of 20µm or less, preferably, 10µm or less, and an element formed on the supporting layer (101). In a semiconductor device manufacturing method, a peeling layer (202) composed of aluminum, a supporting layer (203) composed of polymeric molecules, and an element are formed in this order on a substrate (201), the peeling layer (202) is dissolved by using an alkaline solution and the substrate (201) is removed. In a semiconductor device manufacturing method, a supporting layer (303) composed of polymeric molecules, and an element are formed in this order on a substrate (301), and the substrate (301) is removed by applying a mechanical force. The semiconductor device, which is thinner than conventional semiconductor devices, preferably having a total thickness of approximately 30µm or less, has characteristics which do not change even when curved or bent and returns to an original shape, is provided. The method for manufacturing such semiconductor device is also provided.