NONVOLATILE MEMORY AND MANUFACTURING METHOD THEREOF

摘要

A non-volatile memory and a manufacturing method thereof are provided to ensure a wide memory margin and improve a characteristic of erasing operation and storage time. A non-volatile memory includes a substrate(100) and a gate structure. The gate structure has a tunneling dielectric layer(201) formed on the substrate, a first floating gate(202) formed on the tunneling dielectric layer, an interfacial dielectric layer(203) formed on the first floating gate, a second floating gate(204) formed on the facial dielectric layer and having a work function higher than the first floating gate, a control dielectric layer(205) formed on the second floating gate and a gate electrode(206) formed on the control dielectric layer.