| 摘要 |
<p>A dry etching method for a phase change material is provided to obtain a clear anisotropic etching profile by using a bromine-based gas and etching an alloy using an ion and a radical in the plasma. A GexSbyTez alloy is etched by using a mixture gas of HBr or Br2 and H2 as a main etching gas and generating plasma in the etching gas. The HBr gas has concentration of 40 volume%, and a remainder is an inert gas selected from the group consisting of He gas, Ne gas, Ar gas and N2 gas. The etching process is performed under conditions comprising a coil high-frequency power of 700W to 1000W, a DC-bias voltage of 200V to 300V, and a gas pressure of 5 to 10mTorr.</p> |
