发明名称 STARTING PROGRAM VOLTAGE SHIFT WITH CYCLING OF NON-VOLATILE MEMORY
摘要 A system is disclosed for programming non-volatile storage that improves performance by setting the starting programming voltage to a first level for fresh parts and adjusting the starting programming voltage as the memory is cycled. For example, the system programs a set of non-volatile storage elements during a first period using an increasing program signal with a first initial value and subsequently programs the set of non-volatile storage elements during a second period using an increasing program signal with a second initial value, where the second period is subsequent to the first period and the second initial value is different than the first initial value.
申请公布号 KR20080016598(A) 申请公布日期 2008.02.21
申请号 KR20077028257 申请日期 2006.05.26
申请人 SANDISK CORPORATION 发明人 LUTZE JEFFREY W.
分类号 G11C16/34;G11C16/10 主分类号 G11C16/34
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