| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that only operation at a duty ratio 50% (the operation that on-period and off-period of power MOSFET become the same period) can be performed in the conventional resonant gate drive circuit. SOLUTION: The resonant gate drive circuit of a power MOSFET element Q3 is provided with: a first driving part 11 for driving the power MOSFET element Q3 having the power MOSFET element Q3 and a pair of complementary switching elements Q1 and Q2 which are connected in series; and a second driving part 12 for driving the power MOSFET element Q3 having a resonant inductor L1 provided between a connection part P1 where the switching element Q1 and the switching element Q2 are connected in the first driving part 11 and a gate G of the power MOSFET element Q3, and a pair of complementary switching elements Q4 and Q5 which are connected in series are installed between the resonant inductor L1 and a gate G. COPYRIGHT: (C)2008,JPO&INPIT
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