发明名称 |
METHOD OF MANUFACTURING THIN FILM TRANSISTOR ARRAY PANEL |
摘要 |
A method of manufacturing a thin film transistor array panel includes forming an amorphous silicon film on an insulating substrate; forming a sacrificial film having an embossed surface on the amorphous silicon film; contacting a metal plate with the sacrificial film and performing heat-treatment for crystallizing the amorphous silicon film to change the amorphous silicon film to a polycrystalline silicon film; removing the metal plate and the sacrificial film; patterning the polycrystalline silicon film to form a semiconductor; forming a gate insulating layer which covers the semiconductor; forming a gate line on the gate insulating layer, a portion of the gate line overlapping the semiconductor; heavily doping a conductive impurity into portions of the semiconductor to form a source region and a drain region; forming an interlayer insulating layer which covers the gate line and the semiconductor; and forming a data line and an output electrode connected to the source and drain regions, respectively, on the interlayer insulating layer.
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申请公布号 |
US2008044965(A1) |
申请公布日期 |
2008.02.21 |
申请号 |
US20070839683 |
申请日期 |
2007.08.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
CHOI JAE-BEOM;CHANG YOUNG-JIN;CHOI YOON-SEOK;SHIM SEUNG-HWAN;JO HAN-NA;SHIN JUNG-HOON;KOH JOON-YOUNG |
分类号 |
H01L21/86 |
主分类号 |
H01L21/86 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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