发明名称 |
Method of determining a memory state of a resistive memory cell and device measuring the memory state of a resistive memory cell |
摘要 |
A method of determining the memory state of a resistive memory cell including a first electrode, a second electrode and an active material being arranged between the first electrode and the second electrode, comprises generating a read capacity by applying a voltage between the first electrode and the second electrode, discharging the read capacity over the active material of the memory cell, and determining the memory state of the memory cell in dependence on a change of the voltage during the discharge of the read capacity.
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申请公布号 |
US2008043521(A1) |
申请公布日期 |
2008.02.21 |
申请号 |
US20060507362 |
申请日期 |
2006.08.21 |
申请人 |
LIAW CORVIN;ANGERBAUER MICHAEL;HOENIGSCHMID HEINZ |
发明人 |
LIAW CORVIN;ANGERBAUER MICHAEL;HOENIGSCHMID HEINZ |
分类号 |
G11C11/00;G11C7/02;G11C7/06 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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