PHASE CHANGE MEMORY DEVICE AND FABRICATION METHODS OF USING THE SAME

摘要

A phase-change memory device and a manufacturing method thereof are provided to improve a retention characteristic by using a phase-change material comprising Sb of 22.2 or more. A phase-change material is formed between a bottom electrode(110) and a top electrode(130). The phase-change material comprises Sb of 22,2 at.% or more in a phase diagram of a ternary system containing Ge, Sb and Te. The phase-change material comprises Ge of 16.6 to 22.2 at.%, Sb of 22.2 to 41.6 at.% and Te of 41.6 to 55.5 at.%. The phase-change material contains at least one selected from the group consisting of B, C, N and O.