发明名称 FLASH MEMORY DEVICE SHARING A HIGH VOLTAGE GENERATOR
摘要 A flash memory device sharing a high voltage generator is provided to reduce chip area by reducing the number of high voltage pump circuits. A cell array(140) includes memory cells connected to a plurality of word lines. A voltage generator generates a first voltage provided to unselected word lines among the plurality of word lines during program operation, and a second voltage provided to the unselected word lines during program verification operation. The second voltage is lower than the first voltage. The voltage generator generates the first voltage and the second voltage through an equal charge pump circuit.
申请公布号 KR100805839(B1) 申请公布日期 2008.02.21
申请号 KR20060082378 申请日期 2006.08.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, JIN KOOK;LEE, JIN YUB
分类号 G11C16/30;G11C8/08 主分类号 G11C16/30
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