| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a reliable semiconductor device which suppresses the variation in transistor characteristics caused by random components, in a semiconductor device equipped with a MIS transistor having a retrograde channel structure at least, and to provide its manufacturing method. <P>SOLUTION: A channel region 18 having a peak of impurity concentration is formed in a substrate 10 inside a region Tr1 of the substrate 10, and channel regions 16 and 14 having a peak of impurity concentration near the surface of the semiconductor substrate 10 are formed in a region Tr2 and a region Tr3. Then, after forming an extension region 22 in the region Tr1, region Tr2 and region Tr3 respectively, the substrate 10 is heat-treated so as to extinguish a defect generated in the extension region 22. Subsequently, a source drain region 24 is formed respectively in the region Tr1, region Tr2 and region Tr3, using a gate electrode 21 and a side wall spacer 23 as a mask. <P>COPYRIGHT: (C)2008,JPO&INPIT |
